J309 Datasheet, PDF (2/13 Pages) Fairchild Semiconductor – N-Channel RF Amplifier

N-Channel RF Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V_(BR)GSS
I_GSS
Gate-Source Breakdown Voltage
Gate Reverse Current
V_GS(off)
Gate-Source Cutoff Voltage
I_G = - 1.0 µA, V_DS = 0
V_GS = - 15 V, V_DS = 0
V_GS = - 15 V, V_DS = 0, T_A = 125°C
V_DS = 10 V, I_D = 1.0 nA
J309
J310
- 25
- 1.0
- 2.0
ON CHARACTERISTICS
I_DSS
Zero-Gate Voltage Drain Current*
V_GS(f)
Gate-Source Forward Voltage
V_DS = 10 V, V_GS = 0
V_DS = 0, I_G = 1.0 mA
J309 12
J310 24
V
- 1.0 nA
- 1.0 µA
- 4.0 V
- 6.5 V
30 mA
60 mA
1.0
V
SMALL SIGNAL CHARACTERISTICS
Re₍y_is)
Re₍y_os)
G_pg
Re₍y_fs)
Re₍y_ig)
g_fs
g_os
g_fg
g_og
C_dg
C_sg
NF
e_n
Common-Source Input Conductance V_DS = 10, I_D = 10 mA, f = 100 MHz
J309
J310
Common-Source Output
Conductance
V_DS = 10, I_D = 10 mA, f = 100 MHz
Common-Gate Power Gain
V_DS = 10, I_D = 10 mA, f = 100 MHz
Common-Source Forward
Transconductance
V_DS = 10, I_D = 10 mA, f = 100 MHz
Common-Gate Input Conductance V_DS = 10, I_D = 10 mA, f = 100 MHz
Common-Source Forward
Transconductance
V_DS = 10, I_D = 10 mA, f = 1.0 kHz
J309
J310
Common-Source Output
Conductance
V_DS = 10, I_D = 10 mA, f = 1.0 kHz
Common-Gate Forward Conductance V_DS = 10, I_D = 10 mA, f = 1.0 kHz
J309
J310
Common-Gate Output Conductance V_DS = 10, I_D = 10 mA, f = 1.0 kHz
J309
J310
Drain-Gate Capacitance
V_DS = 0, V_GS = - 10, f = 1.0 MHz
Source-Gate Capacitance
V_DS = 0, V_GS = - 10, f = 1.0 MHz
Noise Figure
V_DS = 10 V, I_D = 10 mA,
f = 450 MHz
Equivalent Short-Circuit Input
Noise Voltage
V_DS = 10 V, I_D = 10 mA,
f = 100 Hz
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
0.7
mmhos
0.5
mmhos
0.25
mmhos
16
dB
12
mmhos
12
mmhos
10,000
8000
20,000 µmhos
18,000 µmhos
150 µmhos
13,000
12,000
µmhos
µmhos
100
µmhos
150
µmhos
2.0 2.5 pF
4.1 5.0 pF
3.0
dB
6.0
nV/ÖHz