J309 Datasheet, PDF (1/13 Pages) Fairchild Semiconductor – N-Channel RF Amplifier

Discrete POWER & Signal
Technologies
J309
J310
MMBFJ309
MMBFJ310
G
G
SD
TO-92
D
SOT-23
S
Mark: 6U / 6T
N-Channel RF Amplifier
This device is designed for VHF/UHF amplifier, oscillator and mixer
applications. As a common gate amplifier, 16 dB at 100 MHz and
12 dB at 450 MHz can be realized. Sourced from Process 92.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_DS
V_GS
I_GF
T_J ,T_stg
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
25
- 25
10
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
Rθ_JC
Thermal Resistance, Junction to Case
R_θJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
J309 / J310
350
2.8
125
*MMBFJ309
225
1.8
357
556
Units
mW
mW /°C
°C/W
°C/W
ã 1997 Fairchild Semiconductor Corporation