IRFRU120A Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

IRFR/U120A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TCC=25^ΟC unless otherwise specified)
Symbol
BV_DSS
∆BV/ ∆T_J
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
Characteristic
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Min. Typ. Max. Units
Test Condition
100 -- --
-- 0.12 --
2.0 -- 4.0
V V_GS=0V,I_D=250 ^µA
V/^ΟC I_D=250^µA See Fig 7
V V_DS=5V,I_D=250 ^µA
-- -- 100 _nA ^VGS^=20V
-- -- -100
V_GS=-20V
-- -- 10
V_DS=100V
--
-- 100 ^{µA V}DS^=80V,TC^=125ΟC
-- -- 0.2 Ω V_GS=10V,I_D=4.2A
O⁴
-- 6.29 -- _Ω V_DS=40V,I_D=4.2A
O⁴
-- 370 480
-- 95 110 _pF ^{VGS=0V,VDS=25V,f =1MHz}
See Fig 5
-- 38 45
-- 14 40
-- 14 40
V_DD=50V,I_D=9.2A,
-- 36 90 ^{ns RG=18Ω}
See Fig 13
-- 28 70
O⁴ O5
-- 16 22
V_DS=80V,V_GS=10V,
-- 2.7 -- nC I_D=9.2A
-- 7.8 --
See Fig 6 & Fig 12 ^{O4 O5}
Source-Drain Diode Ratings and Characteristics
Symbol
I_S
I_SM
V_SD
t_rr
Q_rr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O¹ --
-- 8.4
Integral reverse pn-diode
A
-- 34
in the MOSFET
O⁴ -- -- 1.5 V T_J=25^ΟC,I_S=8.4A,V_GS=0V
-- 98 -- ns T_J=25^ΟC ,I_F=9.2A
-- 0.34 -- ^µ C di_F/dt=100A/ µs
O⁴
Notes ;
O^{1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature}
O^{2 L=3mH, I}AS^{=8.4A, V}DD^{=25V, R}G^{=27Ω , Starting T}J ^=25oC
O^{3 I}SD ^{<_ 9.2A, di/dt <_ 300A/ µs, V}DD ^{<_ BV}DSS ^{, Starting T}J ^=25oC
O^{4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_2%}
O^{5 Essentially Independent of Operating Temperature}