IRFRU120A Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

Advanced Power MOSFET
IRFR/U120A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 ^µA (Max.) @ V_DS = 100V
Lower R_DS(ON) : 0.155 ^Ω(Typ.)
BV_DSS = 100 V
R_DS(on) = 0.2 ^Ω
I_D = 8.4 A
D-PAK I-PAK
2
1
1
3
2
3
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J , T_STG
T_L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T_C=25 ^ΟC)
Continuous Drain Current (T_C=100 ^ΟC)
Drain Current-Pulsed
O¹
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O²
Avalanche Current
O¹
Repetitive Avalanche Energy
O¹
Peak Diode Recovery dv/dt
O³
Total Power Dissipation (T_A=25^ΟC ) ^*
Total Power Dissipation (T_C=25 ^ΟC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
1. Gate 2. Drain 3. Source
Value
100
8.4
5.3
34
+_{_ 20}
141
8.4
3.2
6.5
2.5
32
0.26
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/^ΟC
Ο_C
Thermal Resistance
Symbol
Characteristic
Typ.
R _{θ JC}
R_{θ JA}
R_θJA
Junction-to-Case
--
Junction-to-Ambient *
--
Junction-to-Ambient
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
3.9
50
110
Units
Ο_{C /W}
Rev. B
©1999 Fairchild Semiconductor Corporation