HFA50HF20 Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – Ultrafast, Soft Recovery Diode

HFA50HF20
Electrical Characteristics (per Leg) @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
VBR
Cathode Anode Breakdown Voltage
200 — — V IR = 100µA
V_FM
Max Forward Voltage
0.88 0.96
I_F = 50A
— 0.98 1.11 V IF = 100A
See Fig. 1
0.75 0.84
I_F = 50A, T_J = 125°C
IRM
Max Reverse Leakage Current
— — 10 µA VR = VR Rated
See Fig. 2
— — 1.0 mA TJ = 125°C, VR = 160V
C_T
Junction Capacitance
— 170 310 pF V_R = 200V
See Fig. 3
LS
Series Inductance
— 2.8 — nH Measured from center of bond pad to
end of anode bonding wire
Dynamic Recovery Characteristics (per Leg) @ T_J = 25°C (unless otherwise specified)
trr
t_rr1
trr2
I_RRM1
IRRM2
Qrr1
Q_rr2
di(rec)M/dt1
di_(rec)M/dt2
Parameter
Reverse Recovery Time
Peak Recovery Current
Reverse Recovery Charge
Peak Rate of Fall of Recovery Current
During t_b
Min. Typ. Max. Units
Test Conditions
— 35 —
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
— 62 93 ns T_J = 25°C See Fig.
— 98 150
TJ = 125°C
5
IF = 50A
— 10 18
— 14 26
A ^{TJ = 25°C See Fig.}
TJ = 125°C
6
VR = 200V
— 260 390 _nC TJ = 25°C See Fig.
— 640 960
T_J = 125°C
7 di_f/dt = 200A/µs
— 600 900 _A/µs TJ = 25°C See Fig.
— 980 1500
T_J = 125°C
8
Lead Assignments :
1 - Cathode
2, 3 - Anode
IR Case Style SMD-1
Dimensions in millimeters and (inches)