HFA50HF20 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Ultrafast, Soft Recovery Diode

PD 2.506
HEXFRED^TM
PRELIMINARY
HFA50HF20
Ultrafast, Soft Recovery Diode
Features
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
• Hermetic
• Surface Mount
Description
HEXFRED^TM diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems.
An extensive characterization of the recovery behavior
for different values of current, temperature and di/dt
simplifies the calculations of losses in the operating
conditions. The softness of the recovery eliminates the
need for a snubber in most applications. These devices
are ideally suited for power converters, motors drives and
other applications where switching losses are significant
portion of the total losses.
CATHODE
ANODE
ANODE
V_R = 200V
V_F = 0.96V
Q_rr * = 640nC
di_(rec)M/dt * = 980A/µs
* 125°C
SMD -1
Absolute Maximum Ratings (per Leg)
V_R
IF @ TC = 100°C
IFSM @ TC = 25°C
P_D @ T_C = 25°C
TJ
T_STG
Parameter
D.C. Reverse Voltage
Continuous Forward Current 
Single Pulse Forward Current ‚
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
200
50
600
125
-55 to +150
Units
V
A
W
°C
Thermal - Mechanical Characteristics
R_θJC
Wt
Parameter
Junction-to-Case, Single Leg Conducting
Weight
Note:  D.C. = 50% rect. wave
‚ 1/2 sine wave, 60 Hz , P.W. = 8.33 ms
Typ.
—
2.6
Max.
1.0
—
Units
°C/W
g
4/7/97