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| H11F3SR2M Datasheet, PDF (2/11 Pages) Fairchild Semiconductor – H11F1M, H11F2M, H11F3M Photo FET Optocouplers | |||
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Absolute Maximum Ratings (TA = 25°C unless otherwise speciï¬ed)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter
TOTAL DEVICE
TSTG
TOPR
TSOL
EMITTER
Storage Temperature
Operating Temperature
Lead Solder Temperature
IF
VR
IF(pk)
PD
Continuous Forward Current
Reverse Voltage
Forward Current â Peak (10µs pulse, 1% duty cycle)
LED Power Dissipation 25°C Ambient
Derate Linearly from 25°C
DETECTOR
PD
Detector Power Dissipation @ 25°C
Derate linearly from 25°C
BV4-6
Breakdown Voltage (either polarity)
I4-6
Continuous Detector Current (either polarity)
Device
Value
Units
All
-40 to +150
°C
All
-40 to +100
°C
All
260 for 10 sec
°C
All
60
mA
All
5
V
All
1
A
All
100
mW
1.33
mW/°C
All
H11F1M,
H11F2M
H11F3M
All
300
4.0
±30
±15
±100
mW
mW/°C
V
V
mA
©2007 Fairchild Semiconductor Corporation
H11F1M, H11F2M, H11F3M Rev. 1.0.5
2
www.fairchildsemi.com
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