H11F3SR2M Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – H11F1M, H11F2M, H11F3M Photo FET Optocouplers

May 2012
H11F1M, H11F2M, H11F3M
Photo FET Optocouplers
Features
As a remote variable resistor:
■ ≤ 100Ω to ≥ 300MΩ
■ ≤ 15pF shunt capacitance
■ ≥ 100GΩ I/O isolation resistance
As an analog switch:
■ Extremely low offset voltage
■ 60 V_pk-pk signal capability
■ No charge injection or latch-up
■ UL recognized (File #E90700)
Applications
As a remote variable resistor:
■ Isolated variable attenuator
■ Automatic gain control
■ Active filter fine tuning/band switching
As an analog switch:
■ Isolated sample and hold circuit
■ Multiplexed, optically isolated A/D conversion
General Description
The H11FXM series consists of a Gallium-Aluminum-
Arsenide IRED emitting diode coupled to a symmetrical
bilateral silicon photo-detector. The detector is electri-
cally isolated from the input and performs like an ideal
isolated FET designed for distortion-free control of low
level AC and DC analog signals. The H11FXM series
devices are mounted in dual in-line packages.
Schematic
ANODE 1
CATHODE 2
3
6
OUTPUT
TERM.
5
4
OUTPUT
TERM.
Package Outlines
©2007 Fairchild Semiconductor Corporation
H11F1M, H11F2M, H11F3M Rev. 1.0.5
www.fairchildsemi.com