H11F1_03 Datasheet, PDF (2/10 Pages) Fairchild Semiconductor – PHOTO FET OPTOCOUPLERS

PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
Absolute Maximum Ratings (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Device
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
EMITTER
Continuous Forward Current
Reverse Voltage
Forward Current - Peak (10 µs pulse, 1% duty cycle)
LED Power Dissipation 25°C Ambient
Derate Linearly From 25°C
DETECTOR
Detector Power Dissipation @ 25°C
Derate linearly from 25°C
Breakdown Voltage (either polarity)
Continuous Detector Current (either polarity)
T_STG
T_OPR
T_SOL
I_F
V_R
I_F(pk)
P_D
P_D
BV_4-6
I_4-6
All
All
All
All
All
All
All
All
H11F1, H11F2
H11F3
All
Value
Units
-55 to +150
°C
-55 to +100
°C
260 for 10 sec
°C
60
mA
5
V
1
A
100
mW
1.33
mW/°C
300
4.0
±30
±15
±100
mW
mW/°C
V
V
mA
ELECTRICAL CHARACTERISTICS (T_A = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
EMITTER
Input Forward Voltage
Reverse Leakage Current
Capacitance
OUTPUT DETECTOR
Breakdown Voltage
Either Polarity
Off-State Dark Current
Off-State Resistance
Capacitance
Test Conditions
I_F = 16 mA
V_R = 5 V
V = 0 V, f = 1.0 MHz
I_4-6 = 10µA, I_F = 0
V_4-6 = 15 V, I_F = 0
V_4-6 = 15 V, I_F = 0, T_A = 100°C
V_4-6 = 15 V, I_F = 0
V_4-6 = 15 V, I_F = 0, f = 1MHz
Symbol
Device
V_F
I_R
C_J
BV_4-6
I_4-6
R_4-6
C_4-6
All
All
All
H11F1, H11F2
H11F3
All
All
All
All
Min Typ* Max Unit
1.3 1.75 V
10 µA
50
pF
30
V
15
50 nA
50 µA
300
MΩ
15 pF
© 2003 Fairchild Semiconductor Corporation
Page 2 of 10
3/19/03