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H11F1_03 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – PHOTO FET OPTOCOUPLERS | |||
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PHOTO FET OPTOCOUPLERS
PACKAGE
H11F1 H11F2 H11F3
SCHEMATIC
6
6
1
1
ANODE 1
CATHODE 2
3
6
OUTPUT
TERM.
5
4
OUTPUT
TERM.
6
1
DESCRIPTION
The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-
detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free
control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.
FEATURES
As a remote variable resistor
⢠⤠100⦠to ⥠300 Mâ¦
⢠⥠99.9% linearity
⢠⤠15 pF shunt capacitance
⢠⥠100 G⦠I/O isolation resistance
As an analog switch
⢠Extremely low offset voltage
⢠60 Vpk-pk signal capability
⢠No charge injection or latch-up
⢠ton, toff ⤠15 µS
⢠UL recognized (File #E90700)
⢠VDE recognized (File #E94766)
â Ordering option â300â (e.g. H11F1.300)
APPLICATIONS
As a variable resistor â
⢠Isolated variable attenuator
⢠Automatic gain control
⢠Active ï¬lter ï¬ne tuning/band switching
As an analog switch â
⢠Isolated sample and hold circuit
⢠Multiplexed, optically isolated A/D conversion
© 2003 Fairchild Semiconductor Corporation
Page 1 of 10
3/19/03
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