H11D1 Datasheet, PDF (2/8 Pages) Motorola, Inc – 6-Pin DIP Optoisolators High Voltage Transistor Output(300 Volts)

HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
ABSOLUTE MAXIMUM RATINGS (Cont.)
Parameter
DETECTOR
*Power Dissipation @ T_A = 25°C
Derate linearly above 25°C
*Collector to Emitter Voltage
*Collector Base Voltage
*Emitter to Collector Voltage
Collector Current (Continuous)
H11D1 - H11D2
H11D3 - H11D4
4N38
H11D1 - H11D2
H11D3 - H11D4
4N38
H11D1 - H11D2
H11D3 - H11D4
H11D1, H11D2, H11D3, H11D4, 4N38
Symbol
P_D
V_CER
V_CBO
V_ECO
Value
300
4.0
300
200
80
300
200
80
7
100
Units
mW
mW/°C
V
mA
ELECTRICAL CHARACTERISTICS (T_A = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Characteristic
Test Conditions Symbol Device
Min Typ**
Max
Unit
EMITTER
*Forward Voltage
(I_F = 10 mA)
V_F
ALL
Forward Voltage Temp.
Coefficient
!VF
!TA
ALL
Reverse Breakdown Voltage
Junction Capacitance
*Reverse Leakage Current
DETECTOR
*Breakdown Voltage
Collector to Emitter
(I_R = 10 µA) BV_R
ALL
6
(V_F = 0 V, f = 1 MHz)
(V_F = 1 V, f = 1 MHz)
C_J
ALL
ALL
(V_R = 6 V)
I_R
ALL
(R_BE = 1 M")
(I_C = 1.0 mA, I_F = 0)
BV_CER
H11D1/2
H11D3/4
300
200
(No R_BE) (I_C = 1.0 mA) BV_CEO
4N38
80
H11D1/2 300
*Collector to Base
(I_C = 100 µA, I_F = 0) BV_CBO H11D3/4 200
4N38
80
Emitter to Base
Emitter to Collector
(I_E = 100 µA , I_F = 0)
BV_EBO
BV_ECO
4N38
ALL
7
7
*Leakage Current
Collector to Emitter
(R_BE = 1 M")
(V_CE = 200 V, I_F = 0, T_A = 25°C)
(V_CE = 200 V, I_F = 0, T_A = 100°C)
(V_CE = 100 V, I_F = 0, T_A = 25°C)
(V_CE = 100 V, I_F = 0, T_A = 100°C)
I_CER
H11D1/2
H11D3/4
(No R_BE) (V_CE = 60 V, I_F = 0, T_A = 25°C)
I_CEO
4N38
1.15
-1.8
25
50
65
0.05
10
1.5
V
mV/°C
V
pF
pF
10
µA
V
100
nA
250
µA
100
nA
250
µA
50
nA
Notes
* Parameters meet or exceed JEDEC registered data (for 4N38 only)
** All typical values at T_A = 25°C
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