H11D1 Datasheet, PDF (1/8 Pages) Motorola, Inc – 6-Pin DIP Optoisolators High Voltage Transistor Output(300 Volts)

HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
DESCRIPTION
The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting
diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
FEATURES
• High Voltage
- H11D1, H11D2, BV_CER = 300 V
- H11D3, H11D4, BV_CER = 200 V
• High isolation voltage
- 5300 VAC RMS - 1 minute
- 7500 VAC PEAK - 1 minute
• Underwriters Laboratory (UL) recognized File# E90700
H11D1
H11D2
H11D3
H11D4
4N38
APPLICATIONS
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
• Appliance sensor systems
• Industrial controls
ANODE 1
CATHODE 2
N/C 3
ABSOLUTE MAXIMUM RATINGS
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ T_A = 25°C
Derate above 25°C
EMITTER
*Forward DC Current
*Reverse Input Voltage
*Forward Current - Peak (1µs pulse, 300pps)
*LED Power Dissipation @ T_A = 25°C
Derate above 25°C
6 BASE
5 COLLECTOR
4 EMITTER
Symbol
T_STG
T_OPR
T_SOL
P_D
I_F
V_R
I_F(pk)
P_D
Value
-55 to +150
-55 to +100
260 for 10 sec
260
3.5
80
6.0
3.0
150
1.41
Units
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
8/9/00 200046A