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FQU13N10L_09 Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – 100V LOGIC N-Channel MOSFET
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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
100 --
ID = 250 µA, Referenced to 25°C -- 0.09
IDSS
Zero Gate Voltage Drain Current
VDS = 100 V, VGS = 0 V
VDS = 80 V, TC = 125°C
--
--
--
--
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V
--
--
--
--
--
--
1
10
100
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 5.0 A
VGS = 5 V, ID = 5.0 A
VDS = 30 V, ID = 5.0 A
(Note 4)
1.0 --
--
0.142
0.158
-- 8.7
2.0
0.18
0.2
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 400 520
-- 95 125
-- 20
25
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 50 V, ID = 12.8 A,
RG = 25 Ω
-- 7.5
25
-- 220 450
-- 22
55
(Note 4, 5)
-- 72 150
VDS = 80 V, ID = 12.8 A,
-- 8.7
12
VGS = 5 V
-- 2.0
--
(Note 4, 5)
--
5.3
--
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
10
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
40
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 10 A
--
--
1.5
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 12.8 A,
-- 75
--
ns
dIF / dt = 100 A/µs
(Note 4)
--
0.17
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.43mH, IAS = 10A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 12.8A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2009 Fairchild Semiconductor International
Rev. A5, January 2009
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