English
Language : 

FQU12N20TU Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 200 V, 9 A, 280 mΩ
Package Marking and Ordering Information
Part Number
FQD12N20TM
FQU12N20TU
Top Mark
FQD12N20
FQU12N20
Package
D-PAK
I-PAK
Packing Method
Tape and Reel
Tube
Reel Size
330 mm
N/A
Tape Width
16 mm
N/A
Quantity
2500 units
70 units
Electrical Characteristics TC = 25oC unless otherwise noted.


  
    
 
D*    D > *  
*,(*4,)5(µ%
)(( 
∆D* D > *    
$∆   
4,)5(µ%+ )56  ( /A
4
E; *     
*,)((**,(*
*,/:(*,/)56




4
; D0 >    *,9(**,(*


4
; D0 >  +! *,9(**,(*




/
/(
/((
/((
*
*$6
µ%
µ%
%
%
  
* ;  *  
+      
 + 

      
*,*4,)5(µ%
9 ( 
5(
*
*,/(*4,A 5% 
( )/ ( )-
Ω
*,A(*4,A 5%
 7 9


  

4    

   

+!    
*,)5**,(*
,/ (F#

 7(( '/(

 /)5 /:(


/-
)5

    

    

  + 

   

   
G
 ;  
G
;   
G
;    
*,/((*4,// :%
+,)5Ω

/9
95

 /)( )5(


9(
7(

  

55 /)(

*,/:(*4,//.:%

/-
)9

*,/(*

5


  

-


       
4
 C         
4
 C  8      
*
    *   *,(*4,' (%

+!+ ! 
G
+!+ ! 
*,(*4,// :%
4$,/((%$µ

1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 3.9 mH, IAS = 9.0 A, VDD = 50 V, RG = 25 Ω, Starting TJ = 25oC
3. ISD ≤ 11.6 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, Starting TJ = 25oC
4. Essentially independent of operating temperature


'(
%


9:
%


/5
*
 /9(


 ( :9

µ
©2009 Fairchild Semiconductor Corporation
2
FQD12N20 / FQU12N20 Rev. C1
www.fairchildsemi.com