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| FQU12N20TU Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 200 V, 9 A, 280 mΩ | |||
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FQD12N20 / FQU12N20
N-Channel QFET® MOSFET
200 V, 9 A, 280 mΩ
October 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductorâs proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
⢠9 A, 200 V, RDS(on) = 280 mΩ (Max.) @ VGS = 10 V,
ID = 4.5 A
⢠Low Gate Charge (Typ. 18 nC)
⢠Low Crss (Typ. 18 pF)
⢠100% Avalanche Tested
⢠RoHS Compliant
D
D
G
S
D-PAK
GDS
I-PAK
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
*
4
4
*
<
4
<
!$
*
1,)562
1,/((62
8
; *
8 %!
<
%!
+!%!
<
8 > + !!$
8
8
1
,)562?
8
1,)562
"!)56
+
C
/$-
5
FQD12N20TM / FQU12N20TU
)((
'(
57
9:
±9(
)/(
'(
55
55
)5
55
( AA
55B/5(
9((
Thermal Characteristics
Symbol
Parameter
Rï±JC
Rï±JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction to Ambient (*1 in2 pad of 2 oz copper), Max.
FQD12N20TM
FQU12N20TU
2.27
110
50
Unit
*
%
%
%
*
=
%
=
*$
@
@
@$6
6
6
Unit
oC/W
©2009 Fairchild Semiconductor Corporation
1
FQD12N20 / FQU12N20 Rev. C1
www.fairchildsemi.com
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