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FQT3P20TF Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – P-Channel QFET MOSFET -200 V, -0.67 A, 2.7
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Package Marking and Ordering Information
Device Marking
FQT3P20
Device
FQT3P20TF
Package
SOT-223
Reel Size
13"
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted.
Test Conditions
Tape Width
12 mm
Quantity
2500 units
Min Typ Max Unit
Off Characteristics
BVDSS
∆BVDSS/
∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = -250 µA
ID = -250 µA, Referenced to 25°C
VDS = -200 V, VGS = 0 V
VDS = -160 V, TC = 125°C
VGS = -30 V, VDS = 0 V
VGS = 30 V, VDS = 0 V
-200
--
--
--
--
--
--
-0.18
--
--
--
--
--
--
-1
-10
-100
100
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = -250 µA
VGS = -10 V, ID = -0.335 A
VDS = -40 V, ID = -0.335 A
-3.0 --
-5.0
-- 2.06 2.7
-- 0.7
--
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 190 250
--
45
60
--
7.5
10
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -100 V, ID = -2.8 A,
RG = 25 Ω
--
8.5
25
--
35
80
--
12
35
(Note 4)
--
25
60
VDS = -160 V, ID = -2.8 A,
-- 6.0 8.0
VGS = -10 V
-- 1.7
--
(Note 4) --
2.9
--
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.67 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -2.8 A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 500mH, IAS = -0.67A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -2.8A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
--
-- -0.67 A
--
--
-2.7
A
--
--
-5.0
V
-- 100
--
ns
-- 0.34 --
µC
©2001 Fairchild Semiconductor Corporation
2
FQT3P20 Rev. C0
www.fairchildsemi.com
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