FQT3P20TF Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – P-Channel QFET MOSFET -200 V, -0.67 A, 2.7

FQT3P20
P-Channel QFET^® MOSFET
-200 V, -0.67 A, 2.7 Ω
October 2013
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
• -0.67 A, -200 V, R_DS(on) = 2.7 Ω (Max.) @V_GS = 10 V,
I_D = 0.335 A
• Low Gate Charge ( Typ. 6.0 nC)
• Low Crss ( Typ. 7.5 pF)
D
SOT-223
S
D
G
D
G
D
S
Absolute Maximum Ratings T_C = 25°C unless otherwise noted.
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 70°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R_θJA
Parameter
Thermal Resistance, Junction-to-Ambient
FQT3P20TF
-200
-0.67
-0.53
-2.7
± 30
150
-0.67
0.25
-5.5
2.5
0.02
-55 to +150
300
FQT3P20TF
50
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
©2001 Fairchild Semiconductor Corporation
1
FQT3P20 Rev. C0
www.fairchildsemi.com