FQN1N50CTA Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – N-Channel QFET MOSFET 500 V, 0.38 A, 6 Ohm

Package Marking and Ordering Information
Device Marking
1N50C
Device
FQN1N50C
Package
TO-92
Reel Size
--
Tape Width
--
Electrical Characteristics T_C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ.
Off Characteristics
BV_DSS
Drain-Source Breakdown Voltage
V_GS = 0 V, I_D = 250 µA
500
∆BV_DSS/
∆T_J
Breakdown Voltage Temperature
Coefficient
I_D = 250 µA, Referenced to 25°C
--
I_DSS
Zero Gate Voltage Drain Current
V_DS = 500 V, V_GS = 0 V
--
V_DS = 400 V, T_C = 125°C
--
I_GSSF
Gate-Body Leakage Current, Forward V_GS = 30 V, V_DS = 0 V
--
I_GSSR
Gate-Body Leakage Current, Reverse V_GS = -30 V, V_DS = 0 V
--
On Characteristics
V_GS(th)
R_DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
g_FS
Forward Transconductance
V_DS = V_GS, I_D = 250 µA
V_GS = 10 V, I_D = 0.19 A
V_DS = 40 V, I_D = 0.19A
2.0
--
(Note 4)
--
Dynamic Characteristics
C_iss
C_oss
Input Capacitance
Output Capacitance
V_DS = 25 V, V_GS = 0 V,
--
f = 1.0 MHz
--
C_rss
Reverse Transfer Capacitance
--
Switching Characteristics
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V_DD = 250 V, I_D = 1.0 A,
--
R_G = 25 Ω
--
--
(Note 4, 5)
--
V_DS = 400 V, I_D = 1.0 A,
--
V_GS = 10 V
--
(Note 4, 5)
--
--
0.5
--
--
--
--
--
4.6
0.6
150
28
4.1
10
10
20
15
4.9
0.66
2.9
Drain-Source Diode Characteristics and Maximum Ratings
I_S
Maximum Continuous Drain-Source Diode Forward Current
I_SM
Maximum Pulsed Drain-Source Diode Forward Current
V_SD
Drain-Source Diode Forward Voltage
V_GS = 0 V, I_S = 0.38 A
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
V_GS = 0 V, I_S = 1.0 A,
dI_F / dt = 100 A/µs
--
--
--
--
(Note 4)
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 80mH, I_AS = 1.0A, V_DD = 50V, R_G = 25 Ω, Starting T_J = 25°C
3. I_SD ≤ 0.38A, di/dt ≤ 200A/µs, V_DD ≤ BV_DSS, Starting T_J = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
6. a) Reference point of the R_θJL is the drain lead
b) When mounted on 3”x4.5” FR-4 PCB without any pad copper in a still air environment
(R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance. R_θCA is determined by the user’s board design)
--
--
--
188
0.55
Quantity
2000ea
Max. Unit
--
--
50
250
100
-100
V
V/°C
µA
µA
nA
nA
4.0
V
6.0
Ω
--
S
195
pF
40
pF
--
pF
30
ns
30
ns
50
ns
40
ns
6.4
nC
--
nC
--
nC
0.38
A
3.04
A
1.4
V
--
ns
--
µC
©2001 Fairchild Semiconductor Corporation
FQN1N50C Rev. C0
2
www.fairchildsemi.com