FQN1N50CTA Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel QFET MOSFET 500 V, 0.38 A, 6 Ohm

FQN1N50C
N-Channel QFET MOSFET
500 V, 0.38 A, 6 Ω
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor^®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
March 2013
Features
• 0.38 A, 500 V, R_DS(on) = 6 Ω (Max) @V_GS = 10 V, ID = 0.19 A
• Low Gate Charge (Typ. 4.9 nC)
• Low Crss (Typ. 4.1 pF)
• 100% Avalanche Tested
D
G
D
S
TO-92
FQN Series
Absolute Maximum Ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
P_D
Power Dissipation (T_A = 25°C)
Power Dissipation (T_L = 25°C)
- Derate above 25°C
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
R_θJL
R_θJA
Thermal Resistance, Junction-to-Lead
Thermal Resistance, Junction-to-Ambient
(Note 6a)
(Note 6b)
©2001 Fairchild Semiconductor Corporation
FQN1N50C Rev. C0
1
G
S
FQN1N50C
500
0.38
0.24
3.04
± 30
44.4
0.38
0.21
4.5
0.89
2.08
0.017
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Typ
--
--
Max
60
140
Unit
°C/W
°C/W
www.fairchildsemi.com