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FQI4N80TU Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 800 V, 3.9 A, 3.6 Ω
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Package Marking and Ordering Information
Part Number
FQB4N80TM
FQI4N80TU
Top Mark
FQB4N80
FQI4N80
Package
D2-PAK
I2-PAK
Packing Method
Tape and Reel
Tube
Reel Size
330 mm
N/A
Tape Width
24 mm
N/A
Quantity
800 units
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
800 --
∆BVDSS Breakdown Voltage Temperature
/ ∆TJ Coefficient
ID = 250 µA, Referenced to 25°C -- 0.95
IDSS
Zero Gate Voltage Drain Current
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 1.95 A
VDS = 50 V, ID = 1.95 A
3.0 --
5.0
V
-- 2.8 3.6
Ω
-- 3.8
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 680 880
pF
--
75 100
pF
--
8.6
12
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 400 V, ID = 3.9 A,
RG = 25 Ω
--
16
40
ns
--
45 100
ns
--
35
80
ns
(Note 4)
--
35
80
ns
VDS = 640 V, ID = 3.9 A,
--
19
25
nC
VGS = 10 V
-- 4.2
--
nC
(Note 4)
--
9.1
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 3.9 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 3.9 A,
dIF / dt = 100 A/µs

1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 57 mH, IAS = 3.9 A, VDD = 50 V, RG = 25 Ω, Starting TJ = 25oC
3. ISD ≤ 3.9 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, Starting TJ = 25oC
4. Essentially independent of operating temperature
--
--
3.9
A
--
--
15.6
A
--
--
1.4
V
-- 575
--
ns
-- 3.65
--
µC
©2007 Fairchild Semiconductor Corporation
2
FQB4N80 / FQI4N80 Rev. C1
www.fairchildsemi.com
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