FQI4N80TU Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 800 V, 3.9 A, 3.6 Ω

FQB4N80 / FQI4N80
N-Channel QFET^® MOSFET
800 V, 3.9 A, 3.6 Ω
October 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
• 3.9 A, 800 V, R_DS(on) = 3.6 Ω (Max.) @V_GS = 10 V,
I_D = 1.95 A
• Low Gate Charge (Typ. 19 nC)
• Low Crss (Typ. 8.6 pF)
• 100% Avalanche Tested
D
D
G
S
D²-PAK
GDS
I²-PAK
G
S
Absolute Maximum Ratings T_C = 25^oC unless otherwise noted.
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
Power Dissipation (T_A = 25°C) *
Power Dissipation (T_C = 25°C)
- Derate above 25°C
(Note 3)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQB4N80TM / FQI4N80TU
800
3.9
2.47
15.6
± 30
460
3.9
13
4.0
3.13
130
1.04
-55 to +150
300
Thermal Characteristics
Symbol
Parameter
R_JC
R_JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction to Ambient (*1 in² pad of 2 oz copper), Max.
FQB4N80TM
FQI4N80TU
0.96
62.5
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Unit
o_C/W
©2007 Fairchild Semiconductor Corporation
1
FQB4N80 / FQI4N80 Rev. C1
www.fairchildsemi.com