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FQH90N15_06 Datasheet, PDF (2/10 Pages) Fairchild Semiconductor – N-Channel Power MOSFET
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Package Marking and Ordering Information
Device Marking
FQH90N15
FQA90N15
FQA90N15
Device
FQH90N15
FQA90N15
FQA90N15_F109
Package
TO-247
TO-3P
TO-3PN
Reel Size
--
--
--
Tape Width
--
--
--
Quantity
30
30
30
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA
150
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, Referenced to 25°C
--
IDSS
Zero Gate Voltage Drain Current
VDS = 150V, VGS = 0V
--
VDS = 120V, TC = 150°C
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 25V, VDS = 0V
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -25V, VDS = 0V
--
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250μA
2.0
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 45A
--
gFS
Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 45A
(Note 4) --
Ciss
Input Capacitance
VDS = 25V, VGS = 0V,
--
Coss
Output Capacitance
f = 1.0MHz
--
Crss
Reverse Transfer Capacitance
--
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 75V, ID = 90A
RG = 25Ω
VDS = 120V, ID = 90A
VGS = 10V
Drain-Source Diode Characteristics and Maximum Ratings
--
--
--
(Note 4, 5)
--
--
--
(Note 4, 5)
--
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0V, IS = 90A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 90A
dIF/dt =100A/μs
--
--
--
--
(Note 4)
--
Typ.
--
0.15
--
--
--
--
--
0.014
68
6700
1400
200
105
760
470
410
220
43
110
--
--
--
175
0.97
Max Units
--
--
1
10
100
-100
V
V/°C
μA
μA
nA
nA
4.0
V
0.018 Ω
--
S
8700 pF
1800 pF
260 pF
220 ns
1500 ns
950 ns
830 ns
285 nC
--
nC
--
nC
90
A
360
A
1.5
V
--
ns
--
μC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.29mH, IAS = 90A, VDD = 25V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 90A, di/dt ≤ 300A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
FQH90N15 / FQA90N15 Rev. C
www.fairchildsemi.com
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