FQH90N15_06 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – N-Channel Power MOSFET

FQH90N15 / FQA90N15
N-Channel Power MOSFET
Features
• 90A, 150V, R_DS(on) = 0.018Ω @V_GS = 10 V
• Low gate charge (typical 220 nC)
• Low C_rss (typical 200 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
October 2006
QFET ^®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for low
voltage applications such as audio amplifire, high efficiency
switching for DC/DC converters, and DC motor control,
uninterrupted power supply.
GD _S
TO-247
FQH Series
G DS
TO-3P
FQA Series
{^D
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G_{
z
z
{_S
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
FQH90N15/FQA90N15
150
90
63.5
360
±25
1400
90
37.5
6.0
375
2.5
-55 to +175
300
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Min.
--
0.24
--
Max.
0.4
--
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
1
FQH90N15 / FQA90N15 Rev. C
www.fairchildsemi.com