FMBSA56 Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

Typical Characteristics
vs Collector Current
3 00
V_CE = 1V
2 50
2 00
125 °C
1 50
25 °C
1 00
- 40 °C
50
0.001
0 .01
0.1
I C - COLLECTOR CURRENT (A)
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Voltage vs Collector Current
1.2
β = 1β0
1
β
- 40 °C
0.8
β
25 °C
0.6
125 °C
0.4
10
100
I _C - COLLECTOR CURRE NT (mA)
1 00 0
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
10
V _CB = 60V
1
0.1
0.01
0.001
25
50
75
100
125
T_A- AMBIENT TEMPERATURE (º C)
Figure 5. Collector Cutoff Current
vs Ambient Temperature
Voltage vs Collector Current
0.8
β _{β = 10}
0.6
0.4
0.2
0
10
- 40 °C
25 °C
125 °C
100
I _C - COLLECTOR CURRE NT (mA)
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Collect or Current
1.2
V _CE = 1V
1
0.8
- 40 °C
0.6
25 °C
0.4
125 °C
0.2
0
0.1
1
10
100
I _C - COLLECTOR CURRENT (mA)
1000
Figure 4. Base-Emitter On Voltage
vs Collector Current
f = 1.0 MHz
100
C _ib
C_ob
0.1
1
10
100
V _CE - COLLECTOR VOLTAGE (V)
Figure 6. Collector Saturation Region
©2004 Fairchild Semiconductor Corporation
Rev. A1, November 2004