FMBSA56 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

FMBSA56
PNP General Purpose Amplifier
• This device is designed for general purpose amplifier applications at
collector currents to 300 mA.
• Sourced from Process 73.
NC
C1
E
B
C
pin #1 ^C
SuperSOT^TM-6 single
Mark: .2G1
Absolute Maximum Ratings* T_a=25°C unless otherwise noted
Symbol
Parameter
V_CEO
Collector-Emitter Voltage
V_CBO
Collector-Base Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
- Continuous
T_J, T_STG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
-80
-80
-4.0
-500
- 55 ~ 150
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V_(BR)CEO
Collector-Emitter Sustaining Voltage *
V_(BR)CBO
Collector-Base Breakdown Voltage
V_(BR)EBO
Emitter-Base Breakdown Voltage
I_CEO
Collector Cut-off Current
I_CBO
Collector Cut-off Current
On Characteristics
I_C = -1.0mA, I_B = 0
I_C = -100µA, I_E = 0
I_E = -100µA, I_C = 0
V_CE = -60V, I_B = 0
V_CB = -80V, I_E = 0
h_FE
DC Current Gain
V_CE(sat)
Collector-Emitter Saturation Voltage
V_BE(on)
Base-Emitter On Voltage
Small Signal Characteristics
I_C = -10mA, V_CE = -1.0V
I_C = -100mA, V_CE = -1.0V
I_C = -100mA, I_B = -10mA
I_C = -100mA, V_CE = -1.0V
f_T
Current Gain Bandwidth Product
I_C = -10mA, V_CE = -2.0V,
f = 100MHz
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Min. Max. Units
-80
V
-80
-4.0
V
-0.1 µA
-0.1 µA
100
100
-0.25 V
-1.2
V
50
MHz
Thermal Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation *
R_θJA
Thermal Resistance, Junction to Ambient, total
* Device mounted on a 1 in 2 pad of 2 oz copper.
Max.
700
180
Units
mW
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A1, November 2004