FMBS549 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – PNP Low Saturation Transistor

PNP Low Saturation transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Max Units
OFF CHARACTERISTICS
BV_CEO
Collector to Emitter Voltage
BV_CBO
Collector to Base Voltage
BV_EBO
Emitter to Base Voltage
I_CBO
Collector Cutoff Current
I_EBO
Emitter Cutoff Current
Ic = 10 mA
Ic = 100 uA
Ie = 100 uA
Vcb = 30 V
Vcb = 30 V, Ta= 100C
Veb = 4 V
30
V
35
V
5
V
100 nA
10
uA
100 nA
ON CHARACTERISTICS
h_FE
DC Current Gain
V_CE(sat) ^{Collector-Emitter Saturation Voltage}
V_BE(sat)
V_BE(on)
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Vce = 2V, Ic = 50 mA
Vce = 2V, Ic = 500 mA
Vce = 2V, Ic = 1 A
Vce = 2V, Ic = 2 A
Vce = 0.8V, Ic = 500 m A
Ic = 250 mA,
Ic = 500 mA,
Ic = 1 A,
Ic = 2 A,
Ib = 25 mA
Ib = 50 mA
Ib = 100 mA
Ib = 200 mA
Ic = 1 A, Ib = 100 mA
Ic = 1 A, Vce = 2 V
70
-
100 300
80
40
100
200 mV
350 mV
500 mV
750 mV
1.25
V
1
V
SMALL SIGNAL CHARACTERISTICS
Cobo
Output Capacitance
Vcb = 10V, f = 1MHz
f_T
Current Gain - Bandwidth Product Vce = 5 V, Ic = 100mA, f = 100MHz 100
25
pF
MHz
© 1999 Fairchild Semiconductor
fmbs549.lwp Rev A PrPB