FMBS549 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – PNP Low Saturation Transistor

FMBS549
NC
C
E
B
C
C
Pin 1
Package: SuperSOT-6 single
Mark : .S1
PNP Low Saturation Transistor
ThIs device is designed with high current gain and low saturation voltage with collector currents up to
2A continous. Sourced from process PB.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
V_CEO
V_CBO
V_EBO
I_C
T_J, T_STG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current- Continuous
- Peak Pulse Current
Operating and Storage Junction Temperature Range
Value
30
35
5
1
2
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
A
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
P_D
Total Device Dissipation*
Characteristics
R_θJA
Thermal Resistance, Junction to Ambient, total
*Device mounted on a 1 in2 pad of 2 oz copper.
Max
Units
700
mW
180
°C/W
© 1999 Fairchild Semiconductor
fmbs549.lwp Rev A PrPB