FMBS2383 Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor

Typical Performance Characteristics
1000
V = 5V
CE
T = 125 oC
A
T = 100 oC
A
100
T = 25 oC
a
T = 75 oC
A
1
I = 10 I
C
B
T = 125 oC
A
T = 100 oC
A
0.1
T = 75 ^oC
A
T = 25 oC
A
10
1
10
100
1000
I [mA], COLLECTOR CURRENT
C
Figure 1. DC Current Gain
10
I = 10 I
C
B
T = 25 oC
A
1
T = 75 oC
A
T = 100 oC
A
T = 125 oC
A
0.1
1
10
100
1000
I [mA], COLLECTOR CURRENT
C
Figure 3. Base-Emitter Saturation Voltage
100
T = 125 oC
A
10
T = 100 oC
A
1
T = 75 ^oC
A
0.1
T = 25 ^oC
A
0.01
10
100
V [V], Collector-Base Voltage
CB
Figure 5. Collector-Base Cutoff Current
0.01
1
10
100
1000
I [mA], COLLECTOR CURRENT
C
Figure 2. Collector-Emitter Saturation Voltage
500
V = 5V
CE
400
T = 125 ^oC
A
300
T = 100 ^oC
A
200
T = 75 ^oC
A
100
T = 25 oC
A
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V (on) [V], BASE-EMITTER ON VOLTAGE
BE
Figure 4. Base-Emitter On Voltage
100
10
T = 125 ^oC
A
1
T = 100 ^oC
A
0.1
T = 75 ^oC
A
0.01
1E-3
1
T = 25 oC
A
2
3
4 5 6 7 8 9 10
V [V], Emitter-Base Voltage
EB
Figure 6. Emitter-Base Cutoff Current
© 2011 Fairchild Semiconductor Corporation
FMBS2383 Rev. A0
2
www.fairchildsemi.com