FMBS2383 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor

FMBS2383
NPN Epitaxial Silicon Transistor
Features
• Power Amplifier
• Collector-Emitter Voltage : V_CEO=160V
• Current Gain Bandwidth Product : f_T=120MHz
April 2011
E
C
C
1
6
2
5
B
C
SuperSOT^TM-6 ^C
3
4
Marking : 2383
Absolute Maximum Ratings T_a = 25°C unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
I_B
Base Current
P_D
Power Dissipation
R_θJA*
Thermal Resistance, Junction to Ambient
T_J
Junction Temperature
T_STG
Storage Temperature
* note1) : Minimum land pattern size
Value
160
160
5
800
160
630
200
150
-55 to +150
Units
V
V
V
mA
mA
mW
°C/W
°C
°C
Electrical Characteristics T_a = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE
V_CE (sat)
V_BE (on)
f_T
C_ob
Collector-Base Breakdown Voltage I_C = 10μA, I_B = 0
Collector-Emitter Breakdown Voltage I_C = 10mA, I_B = 0
Emitter-Base Breakdown Voltage I_E = 1mA, I_C = 0
Collector Cut-off Current
V_CB = 120V, I_E = 0
Emitter Cut-off Current
V_BE = 5V, I_C = 0
DC Current Gain
V_CE = 5V, I_C = 100mA
Collector-Emitter Saturation Voltage I_C = 500mA, I_B = 50mA
Base-Emitter On Voltage
V_CE = 5V, I_C = 500mA
Current Gain Bandwidth Product
V_CE = 5V, I_C = 100mA
Output Capacitance
V_CB = 10V, I_E = 0, f = 1MHz
Min.
160
160
5
80
Typ.
120
Max.
100
100
160
1.0
1.0
30
Units
V
V
V
nA
nA
V
V
MHz
pF
© 2011 Fairchild Semiconductor Corporation
FMBS2383 Rev. A0
1
www.fairchildsemi.com