FJAF4310 Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor

Typical Characteristics
10
I_B = 400mA
9
8
7
6
5
4
3
2
1
0
0
1
I_B = 300mA I_B = 250mA
I_B = 200mA
I_B = 150mA
I_B = 100mA
I_B = 50mA
I_B = 20mA
2
3
4
V_CE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characterstic
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
I_C= - 5A
0.4
0.8
1.2
I_C= - 10A
1.6
2.0
I_B [A], BASE CURRENT
Figure 3. V_CE(sat) vs. I_B Characteristics
10
V =4V
CE
8
6
Ta = 25 ^oC
4
2
Ta = 125 ^oC
Ta = - 25 ^oC
0
0.0
0.5
1.0
1.5
V_BE [V], Base-Emitter On VOLTAGE
Figure 5. Base-Emitter On Voltage
©2002 Fairchild Semiconductor Corporation
1000
Ta = 125 ^oC
Ta = 25 ^oC
100
Ta = - 25 ^oC
V =4V
CE
10
0.1
1
10
I_C [A], COLLECTOR CURRENT
Figure 2. DC current Gain
1
I = 10 I
C
B
Ta = 125 ^oC
0.1
Ta = 25 ^oC
Ta = - 25 ^oC
0.01
0.01
0.1
1
10
I_C [A], COLLECTOR CURRENT
Figure 4. Collector-Emitter Saturation Voltage
I (Pulse)
C
10
I_C(DC)
t=100ms
t=10ms
1
T =25℃
C
Single Pulse
0.1
0.1
1
10
100
V [V], COLLECTOR-EMITTER VOLTAGE
CE
Figure 6. Forward Bias Safe Operating Area
Rev. A, November 2002