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| FJAF4310 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor | |||
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FJAF4310
Audio Power Amplifier
⢠High Current Capability : IC=10A
⢠High Power Dissipation
⢠Wide S.O.A
⢠Complement to FJAF4210
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
RθJC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Base Current (DC)
Collector Dissipation (TC=25°C)
Junction to Case
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE
* DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
Cob
Output Capacitance
fT
Current Gain Bandwidth Product
* Pulse Test : PW=20µs
IC=5mA, IE=0
IC=50mA, RBE=â
IE=5mA, IC=0
VCB=200V, IE=0
VEB=6V, IC=0
VCE=4V, IC=3A
IC=5A, IB=0.5A
VCB=10V, f=1MHz
VCE=5V, IC=1A
hFE Classification
Classification
hFE
R
50 ~ 100
O
70 ~ 140
1
TO-3PF
1.Base 2.Collector 3.Emitter
Value
200
140
6
10
1.5
80
1.48
150
- 55 ~ 150
Units
V
V
V
A
A
W
°C/W
°C
°C
Min.
200
140
6
50
Typ.
250
30
Max.
10
10
180
0.5
Units
V
V
V
µA
µA
V
pF
MHz
Y
90 ~ 180
©2002 Fairchild Semiconductor Corporation
Rev. A, November 2002
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