FGPF70N33BT Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 330V, 70A PDP IGBT

Package Marking and Ordering Information
Device Marking
Device
FGPF70N33BT
FGPF70N33BTTU
Package
TO-220F
Packaging
Type
Tube
Qty per Tube
50ea
Max Qty
per Box
--
Electrical Characteristics of the IGBT T_C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BV_CES
Collector to Emitter Breakdown Voltage V_GE = 0V, I_C = 250µA
∆B_VCES/
∆T_J
I_CES
I_GES
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V_GE = 0V, I_C = 250uA
V_CE = V_CES, V_GE = 0V
V_GE = V_GES, V_CE = 0V
330
--
--
V
--
0.3
--
V/^oC
--
--
250
µA
--
--
±400
nA
On Characteristics
V_GE(th)
G-E Threshold Voltage
I_C = 250µA, V_CE = V_GE
2.3
3.3
4.3
V
I_C = 20A, V_GE = 15V
--
1.1
--
V
V_CE(sat)
Collector to Emitter Saturation Voltage ^{IC = 40A, VGE = 15V,}
--
1.4
--
V
I_C = 70A, V_GE = 15V, T_C = 25^oC
--
1.7
--
V
I_C = 70A, V_GE = 15V,
T_C = 125^oC
--
1.8
--
V
Dynamic Characteristics
C_ies
C_oes
C_res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_CE = 30V_, V_GE = 0V,
f = 1MHz
--
1380
--
pF
--
140
--
pF
--
60
--
pF
Switching Characteristics
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_ge
Q_gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
V_CC = 200V, I_C = 20A,
R_G = 5Ω, V_GE = 15V,
Resistive Load, T_C = 25^oC
V_CC = 200V, I_C = 20A,
R_G = 5Ω, V_GE = 15V,
Resistive Load, T_C = 125^oC
V_CE = 200V, I_C = 20A,
V_GE = 15V
--
13
--
ns
--
26
--
ns
--
46
--
ns
--
198
--
ns
--
13
--
ns
--
28
--
ns
--
48
--
ns
--
268
--
ns
--
49
--
nC
--
6.8
--
nC
--
17.5
--
nC
FGPF70N33BT Rev. A
2
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