FGPF70N33BT Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 330V, 70A PDP IGBT

FGPF70N33BT
330V, 70A PDP IGBT
Features
• High current capability
• Low saturation voltage: V_CE(sat) =1.7V @ I_C = 70A
• High input impedance
• Fast switching
• RoHS Compliant
Applications
• PDP System
November 2008
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP
applications where low conduction and switching losses are
essential.
GC E
TO-220F
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
Description
V_CES
V_GES
I_Cpulse(1)*
I_{C pulse(2)}*
P_D
T_J, T_stg
T_L
Collector to Emitter Voltage
Gate to Emitter Voltage
Pulsed Collector Current
@ T_C = 25^oC
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
@ T_C = 25^oC
@ T_C = 25^oC
@ T_C = 100^oC
Operating Junction Temperature and Storage Temperrature
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
1: Repetitive test , Pulse width=100usec , Duty=0.1
2: Half Sine Wave, D< 0.01, pluse width < 5usec
*I_C_pulse limited by max Tj
Ratings
330
± 30
160
220
48
19
-55 to +150
300
Typ.
--
--
Max.
2.62
40
Units
V
V
A
A
W
W
o_C
o_C
Units
o_C/W
o_C/W
©2008 Fairchild Semiconductor Corporation
1
FGPF70N33BT Rev. A
www.fairchildsemi.com