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FGL40N120AND_06 Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – 1200V NPT IGBT
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Package Marking and Ordering Information
Device Marking Device
FGL40N120AND FGL40N120AND
Package
TO-264
Reel Size
-
Tape Width
-
Quantity
25
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Typ.
Max. Units
Off Characteristics
BVCES
BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 1mA
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 250µA, VCE = VGE
IC = 40A, VGE = 15V
IC = 40A, VGE = 15V,
TC = 125°C
IC = 64A, VGE = 15V
Dynamic Characteristics
Cies
Coes
cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate charge
Gate-Emitter Charge
Gate-Collector Charge
VCC = 600V, IC = 40A,
RG = 5Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 600V, IC = 40A,
RG = 5Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCE = 600V, IC = 40A,
VGE = 15V
1200
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3.5
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--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.6
--
--
5.5
2.6
2.9
3.15
3200
370
125
15
20
110
40
2.3
1.1
3.4
20
25
120
45
2.5
1.8
4.3
25
130
220
--
--
1
±250
7.5
3.2
--
--
--
--
--
--
--
--
80
3.45
1.65
5.1
--
--
--
--
--
--
--
38
195
330
V
V/°C
mA
nA
V
V
V
V
pF
pF
pF
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
2
FGL40N120AND Rev. A
www.fairchildsemi.com
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