FGL40N120AND_06 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 1200V NPT IGBT

January 2006
FGL40N120AND
1200V NPT IGBT
Features
• High speed switching
• Low saturation voltage : V_CE(sat) = 2.6 V @ I_C = 40A
• High input impedance
• CO-PAK, IGBT with FRD : t_rr = 75ns (typ.)
Applications
Induction Heating, UPS, AC & DC motor controls and general
purpose inverters.
Description
Employing NPT technology, Fairchild’s AND series of IGBTs
provides low conduction and switching losses. The AND series
offers an solution for application such as induction heating (IH),
motor control, general purpose inverters and uninterruptible
power supplies (UPS).
GC E
TO-264
Absolute Maximum Ratings
Symbol
Parameter
V_CES
V_GES
I_C
I_CM(1)
I_F
I_FM
P_D
SCWT
T_J
T_STG
T_L
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@T_C = 25°C
@T_C = 100°C
Diode Continuous Forward Current
Diode Maximum Forward Current
@T_C = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Short Circuit Withstand Time,
V_CE = 600V, V_GE = 15V, T_C = 125°C
Operating Junction Temperature
@T_C = 25°C
@T_C = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 seconds
Notes:
(1) Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJC(DIODE)
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2006 Fairchild Semiconductor Corporation
1
FGL40N120AND Rev. A
C
G
E
FGL40N120AND
1200
±25
64
40
120
40
240
500
200
10
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
A
W
W
µs
°C
°C
°C
Typ.
--
--
--
Max.
0.25
0.7
25
Units
°C/W
°C/W
°C/W
www.fairchildsemi.com