FFPF60SA60DSTU Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – 6 A, 600 V, STEALTH Dual Diode

Electrical Characteristics (per leg) T_C=25 °C unless otherwise noted
Symbol
Parameter
Min. Typ. Max.
Unit
V_{F *}
Forward Voltage
I_F = 8 A
I_F = 8 A
V
T_C = 25 °C
-
T_C = 125 °C
-
2.0
2.4
1.6
2.0
I_{R *}
Reverse Current
@ rated V_R
T_C = 25 °C
-
T_C = 125 °C
-
µA
-
100
-
1000
t_rr
Maximum Reverse Recovery Time
(I_F = 1 A, di/dt = 100 A/µs, V_R = 30 V)
-
-
25
ns
t_rr
Maximum Reverse Recovery Time (I_F = 8
A, di/dt = 100 A/µs, V_R = 30 V)
-
-
30
ns
t_rr
Reverse Recovery Time
I_rr
Reverse Recovery Current Reverse
Q_rr
Recovery Charge
(I_F = 8 A, di/dt = 200 A/µs, V_R = 390 V)
-
39
-
ns
-
2
-
A
-
39
-
nC
*Pulse Test: Pulse Width=300 µs, Duty Cycle=2%
Typical Characteristics
10
T = 150^oC
C
T = 125oC
C
T = 25oC
C
T = 100oC
C
1
0.1
0.5
1.0
1.5
2.0
2.5
Forward Voltage , V [V]
F
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
100
T = 150oC
C
T = 125oC
C
10
T = 100^oC
C
1
0.1
T = 25^oC
C
0.001
0 50 100 150 200 250 300 350 400 450 500 550 600
Reverse Voltage , V [V]
R
Figure 2. Typical Reverse Current
vs. Reverse Voltage
200
Typical Capacitance
at 0V = 169.3 pF
150
100
50
0.1
1
10
100
Reverse Voltage , V [V]
R
Figure 3. Typical Junction Capacitance
44
42
40
38
36
34
32
30
28
26
100
I =8A
F
Tc = 25^oC
200
300
di/dt [A/µs]
400 500 600
Figure 4. Typical Reverse Recovery Time
vs. di/dt
©2004 Fairchild Semiconductor Corporation
2
FFPF60SA60DS Rev. A
www.fairchildsemi.com