FFPF60SA60DSTU Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 6 A, 600 V, STEALTH Dual Diode

October 2004
FFPF60SA60DS
Features
• Stealth Recovery t_rr = 39 ns (@ I_F = 8 A)
• Max Forward Voltage, V_F = 2.4 V (@ T_C = 25°C)
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
tm
6 A, 600 V, STEALTH™ Dual Diode
The FFPF60SA60DS is STEALTH™ dual diode with soft
recovery characteristics. It is silicon nitride passivated ion-
implanted epitaxial planar construction. This device is intended
for use as freewheeling of boost diode in switching power
supplies and other power swithching applications. Their low
stored charge and hyperfast soft recovery minimize ringing and
electrical noise in many power switching circuits reducing power
loss in the switching transistors.
Applications
• Switch Mode Power Supplies
• Hard Swithed PFC Boost Diode
• UPS Free wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
TO-220F-3L
12 3
1
Absolute Maximum Ratings (per leg) T_C=25°C unless otherwise noted
Symbol
V_RRM
V_RWM
V_R
I_F(AV)
I_FSM
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
@ T_C = 95 °C
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Value
600
600
600
8
80
P_D
W_AVL
T_J, T_STG
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating Junction and Storage Temperature
26
20
- 65 to +150
2
3
Unit
V
V
V
A
A
W
mJ
°C
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Maximum Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
Value
3.125
62.5
Unit
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
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FFPF60SA60DS Rev. A
www.fairchildsemi.com