FDY2001PZ Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – Dual P-Channel (-2.5V) Specified PowerTrench MOSFET

Electrical Characteristics
Symbol
Parameter
T_A = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown
Voltage
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS
Gate–Body Leakage,
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static Drain–Source
On–Resistance
gFS
Forward Transconductance
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VGS = 0 V,
ID = – 250 µA
ID = – 250 µA, Referenced to 25°C
VDS = – 16 V, VGS = 0 V
VGS = ± 8 V, VDS = 0 V
VDS = VGS,
ID = – 250 µA
ID = 250 µA, Referenced to 25°C
VGS = – 4.5 V, ID = –150 mA
VGS = – 2.5 V, ID = –125 mA
VGS = – 1.8 V, ID = –100 mA
VGS = – 1.5 V ID = – 30 mA
VGS = – 4.5 V, ID= – 150 mA,
TJ = 125°C
VDS = – 5 V, ID = – 150 mA
VDS = – 10 V, V GS = 0 V,
f = 1.0 MHz
VDD = – 10 V, ID = – 150 mA,
VGS = – 4.5 V, RGEN = 6 Ω
VDS = – 10 V, ID = – 150 mA,
VGS = – 4.5 V
– 20
– 0.65
16
– 1.0
–3
0.7
100
30
15
6
13
8
1
1.0
0.2
0.3
–3
± 10
– 1.5
8
12
15
20
12
12
23
16
2
1.4
V
mV/°C
µA
µA
V
mV/°C
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = – 150 mA(Note 2)
Voltage
– 0.9 – 1.2
V
trr
Diode Reverse Recovery Time IF = – 150 mA,
Qrr
Diode Reverse Recovery Charge ^{dIF/dt = 100 A/µs}
11
ns
2
nC
Notes:
1. R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R_θJC is guaranteed by design while R_θCA is determined by the user's board design
a) 200°C/W when
mounted on a 1in² pad
of 2 oz copper
b) 280°C/W when mounted on a
minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs,
Duty Cycle < 2.0%
3. The diode connected between the gate
and source serves only as protection
againts ESD. No gate overvoltage
rating is implied.
FDY2001PZ Rev A
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