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FDY2001PZ Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Dual P-Channel (-2.5V) Specified PowerTrench MOSFET | |||
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January 2006
FDY2001PZ
Dual P-Channel (â 2.5V) Specified PowerTrench® MOSFET
General Description
This Dual P-Channel MOSFET has been designed
using Fairchild Semiconductorâs advanced Power
Trench process to optimize the RDS(ON) @ VGS = â 2.5v.
Applications
⢠Li-Ion Battery Pack
Features
⢠â 150 mA, â 20 V RDS(ON) = 8 ⦠@ VGS = â 4.5 V
RDS(ON) = 12⦠@ VGS = â 2.5 V
⢠ESD protection diode (note 3)
⢠RoHS Compliant
6
5
4
S1 1
G1 2
1
2
3
D2 3
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current â Continuous
â Pulsed
Power Dissipation (Steady State)
(Note 1a) 1a)
(Note 1a) 1a)
(Note 1b) 1
Operating and Storage Junction Temperature
Range
Ratings
â 20
±8
â 150
â 1000
625
446
â55 to +150
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 1a)
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1b) 1
Package Marking and Ordering Information
Device Marking
Device
Reel Size
B
FDY2001PZ
7 ââ
200
280
Tape width
8 mm
6 D1
5 G2
4 S2
Units
V
V
mA
mW
°C
°C/W
Quantity
3000units
©2006 Fairchild Semiconductor Corporation
FDY2001PZ Rev A
www.fairchildsemi.com
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