FDT1600N10ALZ Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 100 V, 5.6 A, 160 mΩ

Electrical Characteristics T_J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV_DSS
ΔBV_DSS
ΔT_J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I_DSS
Zero Gate Voltage Drain Current
I_GSS
Gate to Body Leakage Current
I_D = 250 μA, V_GS = 0 V
I_D = 250 μA, referenced to 25 °C
V_DS = 80 V, V_GS = 0V
V_DS = 80 V, T_J = 125 °C
V_GS = ±20 V, V_DS = 0 V
100
-
-
V
-
72
- mV/°C
-
-
1
μA
-
-
500
-
-
±10
μA
On Characteristics
V_GS(th)
Gate Threshold Voltage
R_DS(on)
Static Drain to Source On Resistance
g_FS
Forward Transconductance
V_GS = V_DS, I_D = 250 μA
V_GS = 10 V, I_D = 2.8 A
V_GS = 5 V, I_D = 1.8 A
V_DS = 10 V, I_D = 5.6 A
1.4
-
2.8
V
-
121
160
mΩ
-
156
375
mΩ
-
10.7
-
S
Dynamic Characteristics
C_iss
C_oss
C_rss
C_oss(er)
Q_g(tot)
Q_g(tot)
Q_gs
Q_gd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance(G-S)
V_DS = 50 V, V_GS = 0 V,
f = 1MHz
-
168 225
pF
-
42
55
pF
-
2
3
pF
V_DS = 50 V, V_GS = 0 V
-
76
-
pF
V_GS = 10 V
V_GS = 5 V
V_DD = 50 V,
-
2.9
3.8
nC
I_D = 5.6 A
-
1.6
-
nC
-
0.7
-
nC
(Note 5)
-
0.64
-
nC
f = 1MHz
-
2.04
-
Ω
Switching Characteristics
t_d(on)
t_r
t_d(off)
t_f
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V_DD = 50 V, I_D = 5.6 A,
-
V_GS = 10 V, R_GEN = 4.7 Ω
-
-
(Note 5)
-
7.4 24.8
ns
2.5
15
ns
13.5
37
ns
2.4 14.8
ns
Drain-Source Diode Characteristics
I_S
Maximum Continous Drain to Source Diode Forward Current
-
-
5.6
A
I_SM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
22.4
A
V_SD
Source to Drain Diode Forward Voltage V_GS = 0 V, I_SD = 5.6A
-
-
1.3
V
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
V_GS = 0 V, I_SD = 5.6A, V_DD = 50V,
dI_F/dt = 100A/μs
-
34.1
46
ns
-
32.7
20
nC
NOTES:
1. R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R_θJC is guaranteed by design while R_θCA is determined by the user's board design.
a) 60 °C/W when mounted on a
1 in² pad of 2 oz copper
b) 118 °C/W when mounted on
a minimum pad of 2 oz copper
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. Starting T_J = 25 °C, L = 3 mH, I_AS = 2.47 A
4. I_SD ≤ 5.6A, di/dt ≤ 200A/μs, V_DD ≤ BV_DSS, Starting T_J = 25°C
5. Essentially Independent of Operating Temperature Typical Characteristics
FDT1600N10ALZ Rev.B0
2
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