FDT1600N10ALZ Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 100 V, 5.6 A, 160 mΩ

Preliminary
FDT1600N10ALZ
N-Channel PowerTrench^® MOSFET
100 V, 5.6 A, 160 mΩ
Features
„ R_DS(on) = 121 mΩ at V_GS = 10 V, I_D = 2.8 A
„ R_DS(on) = 156 mΩ at V_GS = 5 V, I_D = 1.8 A
„ Fast Switching Speed
August 2012
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
„ Low Gate Charge
„ High Performance Trench Technology for Extremely Low
R_DS(on)
„ High Power and Current Handling Capability
„ RoHS Compliant
Applications
„ DC-DC converters
„ Synchronous Rectification for Server/Telecom PSU
„ Battery Charger
„ AC Motor Drovers and Uninterruptible Power Supplies
„ Off-line UPS
D
SOT-223
S
D
G
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25 °C)
- Continuous (T_C = 100 °C)
- Pulsed
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25 °C)
- Derate above 25 °C
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8’’ from Case for 5 Seconds
Thermal Characteristics
(Note 2)
(Note 3)
(Note 1a)
(Note 1b)
FDT1600N10ALZ
100
±20
5.6
3.5
22.4
9.2
6.0
10.42
0.083
-55 to +150
300
Units
V
V
A
A
mJ
V/ns
W
°C
°C
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
Package Marking and Ordering Information
(Note 1)
12
(Note 1a)
60
°C/W
Device Marking
16010ALZ
Device
FDT1600N10ALZ
Package
SOT-223
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2012 Fairchild Semiconductor Corporation
1
FDT1600N10ALZ Rev. B0
www.fairchildsemi.com