FDS9958F085 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – Dual P-Channel PowerTrench® MOSFET

Electrical Characteristics T_J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV_DSS
∆BV_DSS
∆T_J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I_DSS
Zero Gate Voltage Drain Current
I_GSS
Gate to Source Leakage Current
I_D = -250µA, V_GS = 0V
-60
I_D = -250µA, referenced to 25°C
V_DS = -48V,
V_GS = 0V
T_J = 125°C
V_GS = ±20V, V_DS = 0V
V
-52
mV/°C
-1
µA
-100
±100 nA
On Characteristics
V_GS(th)
∆V_GS(th)
∆T_J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
r_DS(on)
Static Drain to Source On Resistance
g_FS
Forward Transconductance
V_GS = V_DS, I_D = -250µA
-1.0
-1.6
-3.0
V
I_D = -250µA, referenced to 25°C
4
mV/°C
V_GS = -10V, I_D = -2.9A
V_GS = -4.5V, I_D = -2.5A
V_GS = -10V, I_D = -2.9A, T_J= 125°C
V_DD = -5V, I_D = -2.9A
82
105
103
135
mΩ
131
190
7.7
S
Dynamic Characteristics
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_DS = -30V, V_GS = 0V,
f = 1MHz
765 1020
pF
90
120
pF
40
65
pF
Switching Characteristics
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_g
Q_gs
Q_gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V_DD = -30V, I_D = -2.9A,
V_GS = -10V, R_GEN = 6Ω
V_GS = 0V to -10V
V_GS = 0V to -4.5V
V_DD = -30V,
I_D = -2.9A
6
12
ns
3
10
ns
27
43
ns
6
12
ns
16
23
nC
8
12
nC
2
nC
3
nC
Drain-Source Diode Characteristics
V_SD
Source to Drain Diode Forward Voltage V_GS = 0V, I_S = -1.3A (Note 2)
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_F = -2.9A, di/dt = 100A/µs
-0.8
-1.2
V
26
42
ns
21
35
nC
NOTES:
1. R_θJA is determined with the device mounted on a 1in² pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R_θJC is guaranteed by design while R_θCA is determined by
the user's board design.
a) 78°C/W when
mounted on a 1 in²
pad of 2 oz copper
b) 135°C/W when
mounted on a
minimun pad
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. UIL condition: Starting T_J = 25°C, L = 3mH, I_AS = 6A, V_DD = 60V, V_GS = 10V.
©2008 Fairchild Semiconductor Corporation
2
FDS9958_F085 Rev.A
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