FDS9958F085 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Dual P-Channel PowerTrench® MOSFET

November 2008
FDS9958_F085
Dual P-Channel PowerTrench^® MOSFET
-60V, -2.9A, 105mΩ
Features
„ Max r_DS(on) =105mΩ at V_GS = -10V, I_D = -2.9A
„ Max r_DS(on) =135mΩ at V_GS = -4.5V, I_D = -2.5A
„ Qualified to AEC Q101
„ RoHS Compliant
General Description
These P-channel logic level specified MOSFETs are produced
using Fairchild Semiconductor’s advanced PowerTrench^®
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for superior
switching performance.
These devices are well suited for portable electronics
applications: load switching and power management, battery
charging and protection circuits.
Applications
„ Load Switch
„ Power Management
D2
D2
D1
D1
D2 5
D2 6
Q2
4 G2
3 S2
Pin 1
G2
S2
G1
S1
SO-8
D1 7
D1 8
Q1
2 G1
1 S1
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation for Dual Operation
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
-60
±20
-2.9
-12
54
2
1.6
0.9
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
40
(Note 1a)
78
°C/W
Device Marking
FDS9958
Device
FDS9958_F085
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500units
©2008 Fairchild Semiconductor Corporation
1
FDS9958_F085 Rev.A
www.fairchildsemi.com