FDS8884 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 30V, 8.5A, 23mOhm

Electrical Characteristics T_J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV_DSS
∆BV_DSS
∆ T_J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I_DSS
Zero Gate Voltage Drain Current
I_GSS
Gate to Source Leakage Current
I_D = 250µA, V_GS = 0V
30
I_D = 250µA, referenced to
25^oC
V_DS = 24V
V_GS = 0V
V_GS = ±20V
T_J = 125^oC
V
23
mV/^oC
1
µA
250
±100 nA
On Characteristics (Note 3)
V_GS(th)
∆V_GS(th)
∆ T_J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
r_DS(on)
Drain to Source On Resistance
Dynamic Characteristics
C_iss
C_oss
C_rss
R_G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V_GS = V_DS, I_D = 250µA
I_D = 250µA, referenced to
25^oC
V_GS = 10V, I_D = 8.5A,
V_GS = 4.5V , I_D = 7.5A,
V_GS = 10V, I_D = 8.5A,
T_J = 125^oC
V_DS = 15V, V_GS = 0V,
f = 1MHz
f = 1MHz
1.2
1.7
2.5
V
-4.9
mV/^oC
19
23
23
30
mΩ
26
32
475 635
pF
100 135
pF
65
100
pF
0.9 1.6
Ω
Switching Characteristics (Note 3)
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_g
Q_gs
Q_gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain Charge
V_DD = 15V, I_D = 8.5A
V_GS = 10V, R_GS = 33Ω
V_DS = 15V, V_GS = 10V
I_D = 8.5A
V_DS = 15V, V_GS = 5V
I_D = 8.5A
5
10
ns
9
18
ns
42
68
ns
21
34
ns
9.2
13
nC
5.0
7
nC
1.5
nC
2.0
nC
Drain-Source Diode Characteristics
V_SD
Source to Drain Diode Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_SD = 8.5A
I_SD = 2.1A
I_F = 8.5A, di/dt = 100A/µs
0.9 1.25
V
0.8 1.0
V
33
ns
20
nC
Notes:
1: R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R_θJC is guaranteed by design while R_θCA is determined by the user’s board design.
a) 50°C/W when
mounted on a 1 in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in²
pad of 2 oz copper
c) 125°C/W when
mounted on a
minimun pad
Scale 1 : 1 on letter size paper
2:
3:
SPtualsrteinTgeTs_Jt:=Pu2l5s°_eC_W, L_idt=_h1_<m₃₀H₀, _µI_AsS,=_D8_uA_ty,
V_DD = 27V,
Cycle <2%.
V_GS
=
10V.
2
FDS8884 Rev. A
www.fairchildsemi.com