FDS8884 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 30V, 8.5A, 23mOhm

February 2006
FDS8884
N-Channel PowerTrench^® MOSFET
30V, 8.5A, 23mΩ
General Descriptions
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r_DS(on) and fast switching speed.
AD ^{FREE I}
Features
„ Max r_DS(on) = 23mΩ at V_GS = 10V, I_D = 8.5A
„ Max r_DS(on) = 30mΩ at V_GS = 4.5V, I_D = 7.5A
„ Low gate charge
„ 100% R_G Tested
„ RoHS Compliant
D
D
D
D
SO-8
G
SS
S
5
4
6
3
7
2
8
1
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
V_DS
Drain to Source Voltage
V_GS
Gate to Source Voltage
Drain Current Continuous
I_D
Pulsed
(Note 1a)
E_AS
Single Pulse Avalanche Energy
Power dissipation
P_D
Derate above 25^oC
(Note 2)
T_J, T_STG Operating and Storage Temperature
Ratings
30
±20
8.5
40
32
2.5
20
-55 to 150
Units
V
V
A
A
mJ
W
mW/^oC
o_C
Thermal Characteristics
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
(Note 1a)
50
(Note 1)
25
o_C/W
o_C/W
Package Marking and Ordering Information
Device Marking
FDS8884
Device
FDS8884
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
1
FDS8884 Rev. A
www.fairchildsemi.com