FDS86141 Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 100 V, 7 A, 23 m

Electrical Characteristics T_J = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BV_DSS
BV_DSS
T_J
I_DSS
I_GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
I_D = 250 A, V_GS = 0 V
I_D = 250 A, referenced to 25°C
V_DS = 80 V, V_GS = 0 V
V_GS = ±20 V, V_DS = 0 V
100
V
67
mV/°C
1
A
±100 nA
On Characteristics
V_GS(th)
Gate-to-Source Threshold Voltage
V_GS = V_DS, I_D = 250 A
2
3.1
4
V
V_GS(th)
T_J
Gate-to-Source Threshold Voltage
Temperature Coefficient
I_D = 250 A, Referenced to 25°C
-10
mV/°C
V_GS = 10 V, I_D = 7 A
19
23
r_DS(on)
Static Drain to Source On Resistance
V_GS = 6 V, I_D = 5.5 A
27
37
m
V_GS = 10 V, I_D = 7 A, T_J = 125°C
33
40
g_FS
Forward Transconductance
V_DS = 10 V, I_D = 7 A
19
S
Dynamic Characteristics
C_iss
C_oss
C_rss
R_g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V_DS = 50 V, V_GS = 0 V,
f = 1 MHz
703
934
pF
186
247
pF
8.6
13
pF
0.5

Switching Characteristics
t_d(on)
t_r
t_d(off)
t_f
Q_g(TOT)
Q_gs
Q_gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
V_DD = 50 V, I_D = 7 A,
V_GS = 10 V, R_GEN = 6 
V_GS = 0 V to 10 V
V_GS = 0 V to 5 V V_DD = 50 V
I_D = 7 A
8.3
17
ns
3.2
10
ns
14.3
26
ns
3.2
10
ns
11.8 16.5 nC
6.7
9.4
nC
3.4
nC
3.1
nC
Drain-Source Diode Characteristics
V_SD
Source-to-Drain Diode Forward Voltage
V_GS = 0 V, I_S = 7 A
V_GS = 0 V, I_S = 2 A
(Note 2)
(Note 2)
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_F = 7 A, di/dt = 100 A/s
0.8
1.3
V
0.8
1.2
43
69
ns
39
62
nC
NOTES:
1. R_JA is determined with the device mounted on a 1 in² pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R_JC is guaranteed by design while R_CA is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in² pad of 2 oz copper.
b) 125 °C/W when mounted on a
minimum pad.
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0 %.
3. Starting T_J = 25 ^oC; N-ch: L = 3 mH, I_AS = 9 A, V_DD = 100 V, V_GS = 10 V.
© 2007 Fairchild Semiconductor Corporation
2
FDS86141 • Rev. C4
www.fairchildsemi.com