FDS86141 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 100 V, 7 A, 23 m

August 2011
FDS86141
N-Channel PowerTrench^® MOSFET
100 V, 7 A, 23 m
Features
General Description
 Maximum R_DS(on) = 23 m at V_GS = 10 V, I_D = 7 A
 Maximum R_DS(on) = 36 m at V_GS = 6 V, I_D = 5.5 A
 High-Performance Trench Technology; Extremely Low R_DS(on)
 100% UIL Tested
 RoHS Compliant
This N-channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench^® process that has
been especially tailored to minimize the on-state resistance and
maintain superior switching performance.
Applications
 DC-DC Conversion
D
D
D
D
SO-8
Pin 1
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
T_A = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
(Note 3)
(Note 1a)
(Note 1b)
Ratings
100
±20
7
30
121
5.0
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
Thermal Characteristics
R_JC
R_JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
2.5
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
FDS86141
Device
FDS86141
Package
SO-8
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
© 2007 Fairchild Semiconductor Corporation
1
FDS86141 • Rev. C4
www.fairchildsemi.com