FDS6679Z Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – 30 Volt P-Channel PowerTrench MOSFET

Electrical Characteristics
Symbol
Parameter
T_A = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA
–30
V
∆BV DSS
∆TJ
Breakdown Voltage Temperature
Coeffic ient
ID = –250 µA,Referenced to 25°C
–22
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = –24 V, VGS = 0 V
–1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = –25 V, VDS = 0 V
–10 µA
IGSSR
Gate–Body Leakage, Reverse
VGS = 20 V, VDS = 0 V
10
µA
On Characteristics (Note 2)
V GS(th)
Gate Threshold Voltage
∆V GS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = –250 µA
–1
ID = –250 µA,Referenced to 25°C
–1.7
4.9
VGS = –10 V, ID = –13 A
7.2
VGS = –4.5 V, ID = –11 A
10
VGS=–4.5 V, ID =–13A, TJ=125°C
10
VGS = –4.5 V, VDS = –5 V
–50
VDS = –5 V, ID = –13 A
43
–3
V
mV/°C
9
mΩ
13
13
A
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = –15 V, V GS = 0 V,
f = 1.0 MHz
3803
pF
974
pF
490
pF
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = –15 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω
VDS = –15 V, ID = –13 A,
VGS = –10 V
18 32
ns
9
18
ns
92 147 ns
54 86
ns
67 94
nC
11
nC
15
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –2.1 A (Note 2)
–2.1 A
–0.7 –1.2 V
Notes:
1. R_θJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R_θJC is guaranteed by design while R_θCAis determined by the user's board design.
a) 50°C/W (10 sec)
62.5°C/W steady state
when mounted on a
1in² pad of 2 oz
copper
b) 105°C/W when
mounted on a .04 in²
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDS6679Z Rev C(W)