FDS6679Z Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 30 Volt P-Channel PowerTrench MOSFET

October 2001
FDS6679Z
30 Volt P-Channel PowerTrench^® MOSFET
General Description
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
• –13 A, –30 V. RDS(ON) = 9 mΩ @ VGS = –10 V
RDS(ON) = 13 mΩ @ VGS = – 4.5 V
• Extended VGSS range (–25V) for battery applications
• ESD protection diode (note 3)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
V GSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6679Z
FDS6679Z
13’’
©2001 Fairchild Semiconductor Corporation
5
4
6
3
7
2
8
1
Ratings
–30
–25/+20
–13
–50
2.5
1.2
1.0
–55 to +175
50
25
Units
V
V
A
W
°C
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
FDS6679Z Rev C (W)