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FDS5692Z Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – N-Channel UltraFET Trench MOSFET 50V, 5.8A, 24m Ohm
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings
EAS
Drain-Source Avalanche Energy
(Single Pulse)
IAS
Drain-Source Avalanche Current
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate–Body Leakage
On Characteristics (Note 4)
VGS(th)
Gate Threshold Voltage
ΔVGS(th)
ΔTJ
Gate Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain–Source
On–Resistance
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Qg(TOT)
Total Gate Charge, VGS = 10V
Qg(TOT)
Total Gate Charge, VGS = 5V
Qgs
Gate–Source Gate Charge
Qgd
Gate–Drain Gate Charge
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Rise Time
td(off)
Turn–Off Delay Time
tf
Fall Time
(Note 4)
VDD = 50 V, ID= 12 A, L=1mH
VGS = 0 V,
ID = 250 μA
ID = 250 μA, Referenced to 25°C
VDS = 40 V
VGS = ± 20V,
VGS = 0 V
VDS = 0 V
VDS = VGS,
ID = 250 μA
ID = 250 μA, Referenced to 25°C
VGS = 10 V,
ID = 5.8 A
VGS = 4.5 V, ID = 5.6 A
VGS = 10 V, ID = 5.8A, TJ = 125°C
VDS = 25 V,
f = 1.0 MHz
V GS = 0 V,
f = 1.0 MHz
VDS = 25V,
ID = 5.8A
VDD = 25 V,
VGS = 10 V,
ID = 5.8A,
RGEN = 6 Ω
72
mJ
12
A
50
V
48
mV/°C
1
μA
± 10 μA
1
1.6
3
–6
20 24
26 33
32 41
V
mV/°C
mΩ
1025
pF
150
pF
50
pF
0.79
Ω
18 25
nC
10 14
nC
2.8
nC
3.0
nC
9
18
ns
5
10
ns
27 43
ns
6
12
ns
FDS5692Z Rev C(W)
www.fairchildsemi.com
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